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| P Channel Enhancement Mode MOSFET ST2301A -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE -20V/-2.8A, RDS(ON) = 80m (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 120m @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3 D G 1 1.Gate 2.Source S 2 3.Drain PART MARKING SOT-23 3 S01YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST2301SRG Package SOT-23 Part Marking S01YA Process Code A ~ Z ; a ~ z ST2301SRG S : SOT23 R : Tape Reel ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301A 2005. V1 P Channel Enhancement Mode MOSFET ST2301A -3.0A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical -20 12 -3.0 -2.0 -10 -1.6 1.25 0.8 150 -55/150 120 Unit V V A A A W /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301A 2005. V1 P Channel Enhancement Mode MOSFET ST2301A -3.0A ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr Symbol Condition Min Typ Max Unit V(BR)DSS VGS(th) IGSS IDSS VGS=0V,ID=-250uA VDS=VGS,ID=-250uA VDS=0V,VGS=12V VDS=-20V,VGS=0V VDS=-20V,VGS=0V TJ=55 VDS-5V,VGS=-4.5V VDS-5V,VGS=-2.5V VGS=-2.5V,ID=-2.0A VGS=-4.5V,ID=-2.8A VDS=-5V,ID=-2.8V IS=-1.6A,VGS=0V -20 -0.45 V -1.5 100 -1 -10 uA A 0.080 0.120 V nA ID(on) RDS(on) gfs VSD -6 -3 S -1.2 V 6.5 -0.8 VDS=-6V VGS=-4.5V ID-2.8A VDS=-6V VGS=0V F=1MHz VDD=-6V RL=6 ID=-1A VGEN=-4.5V RG=6 5.8 0.85 1.7 415 223 87 13 36 42 34 10 nC pF 25 60 70 60 nS td(off) tf STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301A 2005. V1 P Channel Enhancement Mode MOSFET ST2301A -3.0A TYPICAL CHARACTERICTICS (25 Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301A 2005. V1 P Channel Enhancement Mode MOSFET ST2301A -3.0A TYPICAL CHARACTERICTICS (25 Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301A 2005. V1 P Channel Enhancement Mode MOSFET ST2301A -3.0A SOT-23 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301A 2005. V1 |
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